Related papers: Non-magnetic semiconductor spin transistor

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…

Generation of spin imbalance in nonmagnetic semiconductors is crucial for the functioning of many spintronic devices. An attractive design of spin injectors into semiconductors is based on a spin pumping from a precessing ferromagnet,…

Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on the eight-band envelope function model. We find that at large wave vectors, RSS is both nonmonotonic and anisotropic as a function of…

The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…

Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…

We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium…

Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The…

When a charge current is injected into an altermagnet along a suitable crystallographic direction, a transverse spin current can be generated. This so-called spin-splitter effect does not rely on spin-orbit coupling, and is thus distinct…

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control,…

We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…

We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…

There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…

The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…

Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…