Related papers: Non-magnetic semiconductor spin transistor
We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
Spin-orbit interaction accounts for the coupling of momentum and spin degrees of freedom of electrons and holes in semiconductor materials. In quantum information processing, it allows for electrical control of spin states and for the…
Momentum-resolved spin-polarized bands are a key ingredient in many proposed spintronic devices, but their existence often relies on lattice commensurability or strong spin-orbit coupling. By a large-scale DFT calculation (up to 4212…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices.…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be…
The anisotropic spin splitting in unconventional magnets opens new opportunities for realizing spintronic functionalities without relying on net magnetization or relativistic spin-orbit coupling. Here, we propose a spin valve and a spin…
Electron spin dynamics is investigated in n-i-n GaAs/AlGaAs coupled quantum wells. The electron spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
We study spin precession due to Rashba spin splitting of electrons and holes in semiconductor quantum wells. Based on a simple analytical expression that we derive for the current modulation in a broad class of experimental situations of…
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
We propose a fast and accurate spin initialization method for a single electron trapped in an electrostatic quantum dot. The dot is created in a nanodevice composed of a catalytically grown indium antimonide (InSb) nanowire and nearby gates…
We show that electrons in ordinary III-V semiconductor double wells with an in-plane modulating periodic potential and inter well spin-orbit interaction are tunable Topological Insulators (TIs). Here the essential TI ingredients, namely,…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
The utilization of spin waves as eigenmodes of the magnetization dynamics for information processing and communication has been widely explored recently due to its high operational speed with low power consumption and possible applications…