Related papers: Non-magnetic semiconductor spin transistor
In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We investigate the spin injection and the spin transport in paramagnetic insulators described by simple Heisenberg interactions using auxiliary particle methods. Some of these methods allow access to both paramagnetic states above magnetic…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
The experimental assessment of the strength ($\alpha_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization.…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
Altermagnets hold great potential for spintronic applications, yet their intrinsic spin dynamics and associated transport properties remain largely unexplored. Here, we investigate spin-resolved quantum transport in a multi-terminal setup…
We predict it is possible to achieve high-efficiency room-temperature spin injection from a mag- netic metal into InAs-based semiconductors using an engineered Schottky barrier based on an InAs/AlSb superlattice. The Schottky barrier with…
Three-dimensional topological insulators are an important class of modern materials, and a strong spin-orbit coupling is involved in making the bulk electronic states very different from those near the surface. Bi$_2$Se$_3$ is a model…
Hexagonal MnTe is an altermagnetic semiconductor with $g$-wave symmetry of spin polarization in momentum space. In the nonrelativistic limit, this symmetry mandates that electric current flowing in any crystallographic direction is…
Studying the influence of breaking time-reversal symmetry on topological insulator surface states is an important problem of current interest in condensed matter physics and could provide a route toward proof-of-concept spintronic devices…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…
We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
We show that a pure spin current can be injected in quantum wells by the absorption of linearly polarized infrared radiation, leading to transitions between subbands. The magnitude and the direction of the spin current depend on the…
A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe$_3$O$_4$ (insulating ferrimagnet) and a spin detector layer. It…
We study the nonequilibrium spin-splitter effect in superconducting altermagnets and superconductor altermagnet hybrids by computing the alternating spin current and edge the spin density in the presence of an alternating electric field. We…
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…
Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a…