Related papers: Ageing Effect of Sb2Te3 thin films
Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K,…
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 {\deg}C. The pristine thin film was deposited using…
The structural aspects of polyacrylamide thin films annealed at degradation threshold temperature have been studied as a function of annealing time using in situ X-ray reflectivity technique in vacuum. We observe significant decrease of…
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…
We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-\delta}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction,…
We showed that a wetting layer in epitaxially strained thin films which decreases with increasing lattice mismatch strain arises due to the variation of nonlinear elastic free energy with film thickness. We calculated how and at what…
The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…
The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure…
In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however,…
Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A^{2}_{1g} phonons shows similar behavior in both materials.…
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and…
The crystal growth of isotactic polystyrene (it-PS) is investigated in very thin, 11 nm thick films. The it-PS crystals grown in the thin films show quite different morphology from that in the bulk. With decreasing crystallization…
To examine the process of native corrosion of ultrathin (about 10 nm) copper films deposited on quartz glass substrates $(SiO_2)$ with and without a germanium sublayer, the time dependences of the microwave reflection coefficient $R$ and…
We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K for…
Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in…
MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in…
Modeling deformation at elevated temperatures using discrete dislocation dynamics (DDD) is a recent area of high interest. However, the literature dedicated to this subject fails to address the variations of DDD parameters with temperature.…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF$_2$ and SrTiO$_3$ - we have stabilised mixed phase films of…