Related papers: Ageing Effect of Sb2Te3 thin films
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We…
At the ultra-thin film limit, quantum confinement strongly improves thermoelectric figure of merit in materials such as Sb$_2$Te$_3$ and Bi$_2$Te$_3$. These high quality films have only been realized using well controlled techniques such as…
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal…
SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both…
$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…
The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…
Glassy dynamics was investigated for thin films of atactic polystyrene by complex electric capacitance measurements using dielectric relaxation spectroscopy. During the isothermal aging process the real part of the electric capacitance…
We report structural and electronic characterization of the charge order phase in Bi0.4Ca0.6MnO3 films, in which photoinduced resistivity changes have been observed at temperatures approaching room temperature. In all films, lattice…
ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…
The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film…
The in-situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in-situ…
This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, two-dimensional electron gas (2DEG) related TE materials hold…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
We present a study of orientational relaxation dynamics in thin films of a low-molecular-weight glass-former as a function of temperature and film thickness. The relaxation is probed by second-harmonic generation after release of a poling…
Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…
A comprehensive picture of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to understanding the physical origin of changes in its topologically protected surface states. We find that surface aging in ambient conditions…
SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of…