Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3

Y. Kim; X. Chen; Z. Wang; J. Shi; I. Miotkowski; Y. P. Chen; P. A. Sharma; A. L. Lima Sharma; M. A. Hekmaty; Z. Jiang; D. Smirnov

doi:10.1063/1.3685465

Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3

Materials Science 2015-06-03 v1 Mesoscale and Nanoscale Physics

Authors: Y. Kim , X. Chen , Z. Wang , J. Shi , I. Miotkowski , Y. P. Chen , P. A. Sharma , A. L. Lima Sharma , M. A. Hekmaty , Z. Jiang , D. Smirnov

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Abstract

Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A^{2}_{1g} phonons shows similar behavior in both materials. The temperature dependence of the peak position and linewidth is analyzed considering the anharmonic decay of optical phonons and the material thermal expansion. This work suggests that Raman spectroscopy can be used for thermometry in Bi_2Se_3- and Sb_2Te_3-based devices in a wide temperature range.

Keywords

Raman-active optical phonons Bi_2Se_3 Sb_2Te_3 temperature dependence anharmonic decay thermometry

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@article{arxiv.1112.1364,
  title  = {Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3},
  author = {Y. Kim and X. Chen and Z. Wang and J. Shi and I. Miotkowski and Y. P. Chen and P. A. Sharma and A. L. Lima Sharma and M. A. Hekmaty and Z. Jiang and D. Smirnov},
  journal= {arXiv preprint arXiv:1112.1364},
  year   = {2015}
}

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4 pages, 3 figures

Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3

Abstract

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