Related papers: Donor states in modulation-doped Si/SiGe heterostr…
A generalized propagation matrix method is used to study how scattering off local Einstein phonons affects resonant electron transmission through quantum wells. In particular, the parity and the number of the phonon mediated satellite…
We analyze here the energy states and associated wave functions available to a particle acted upon by a delta function potential of arbitrary strength and sign and fixed anywhere within a one-dimensional infinite well. We consider how the…
he properties of excitons formed in spherical quantum dots are studied using the $\mathbf{k}\cdot\mathbf{p}$ method within the Hartree approximation. The spherical quantum dots considered have a central core and several concentric layers of…
Darboux-deformations of short range one-dimensional potentials are constructed by means of Gamow-Siegert functions (resonance states). Results include both Hermitian and non-Hermitian short range potentials which are exactly solvable. As…
The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron…
Through systematic experimental and theoretical studies of layer-thickness-dependent absorption in semiconducting MoSe$_2$ and WS$_2$ across the visible to near-infrared spectral range, we demonstrate a universal absorption behavior in…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We present results of transmission measurements on CdTe quantum wells with thin semimagnetic CdMnTe probe layers embedded in various positions along the growth axis. The presence of the probes allow us to map the probability density…
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…
Within the framework of adiabatic approximation, the energy levels and direct interband light absorption in a strongly prolated ellipsoidal quantum dot are studied. Analytical expressions for the particle energy spectrum and absorption…
We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the {\em 1s} Li manifold under external stress. Namely, the…
In the present study we calculate the energy values and the spatial distributions of the bound electronic states in some diffused quantum wells. The calculations are performed within the virtual crystal approximation, $sp^3 s^*$ spin…
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $\delta$-layers). We show that, in addition to the well…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non…
Accurate and efficient approaches to predict the optical properties of organic semiconducting compounds could accelerate the search for efficient organic photovoltaic materials. Nevertheless, predicting the optical properties of organic…
General analytic expressions for the total absorption coefficient of strong electromagnetic waves caused by confined electrons in Infinite semi-parabolic plus Semi-inverse Squared Quantum Wells (ISPSISQW) are obtained by using the quantum…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…
We describe the controlled loading and measurement of number-squeezed states and Poisson states of atoms in individual sites of a double well optical lattice. These states are input to an atom interferometer that is realized by…