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The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional Schr\"{o}dinger equation for the charge impurity in the QW is…
The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…
We show how to numerically calculate several quantities that characterize topological order starting from a microscopic fractional quantum Hall (FQH) Hamiltonian. To find the set of degenerate ground states, we employ the infinite density…
Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high…
In traditional semiconductors with large effective Bohr radius, an electron donor creates a hydrogen-like bound state just below the conduction band edge. The properties of the impurity band arising from such hydrogenic impurities have been…
Within the framework of staircase infinitely deep (SIW) potential well model the effect of dielectric constant mismatch between the size-quantized semiconducting wire, coating and surrounding environment on impurity binding energy is…
An infinite sequence of potential well functions is considered. A trial wavefunction is used with the Schr$\ddot{\text{o}}$dinger equation to obtain an approximate ground state energy for each potential well function. We obtain an…
Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These…
Edge states reflect the key physical properties yet are difficult to probe individually, particularly when several states are present at an edge. We present momentum resolved tunneling spectroscopy between a quantum well and a quantum wire…
In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
Clean two-dimensional electron systems in GaAs/AlGaAs heterostructures exhibit anisotropic collective phases, the quantum Hall nematics, at high Landau level occupancy and low temperatures. An as yet unknown native symmetry-breaking…
Certain superposition states of the 1-D infinite square well have transient zeros at locations other than the nodes of the eigenstates that comprise them. It is shown that if an infinite potential barrier is suddenly raised at some or all…
Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed…
Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Green's function of electron is governed by the Dyson equation with the self-energy function which is…
We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias…
Under certain conditions, focused laser excitation in semiconductor quantum well structures can lead to charge separation and a circular reaction front, which is visible as a ring-shaped photoluminescence pattern. The diffusion-reaction…
The excitation of semiconductor quantum dots often involves an attached wetting layer with delocalized single-particle energy eigenstates. These wetting-layer states are usually approximated by (orthogonalized) plane waves. We show that…