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Band structure related wave function symmetry of amphoteric Si dopants in GaAs

Mesoscale and Nanoscale Physics 2009-11-13 v1 Disordered Systems and Neural Networks
Authors: S. Loth , M. Wenderoth , K. Teichmann , R. G. Ulbrich
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Abstract

Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high resolution. Si(Ga) donor atoms exhibit radially symmetric contrasts. Si(As) acceptors have anisotropic features. The anisotropic acceptor contrasts are traced back to a tunnel process at the valence band edge. They reflect the probability density distribution of the localized acceptor hole state.

Keywords

GaAs Si doping scanning tunneling spectroscopy wave function symmetry amphoteric dopant valence band acceptor state

Cite

@article{arxiv.0711.4755,
  title  = {Band structure related wave function symmetry of amphoteric Si dopants in GaAs},
  author = {S. Loth and M. Wenderoth and K. Teichmann and R. G. Ulbrich},
  journal= {arXiv preprint arXiv:0711.4755},
  year   = {2009}
}

Comments

10 pages, 3 figures

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