Related papers: Donor states in modulation-doped Si/SiGe heterostr…

We find that a donor-doped band-gap material can enhance the overall high-order harmonic generation (HHG) efficiency by several orders of magnitude, compared with undoped and acceptor-doped materials. This significant enhancement, predicted…

The mesoscopic fluctuations of the absorption at optical transitions from a low energy regular state to high energy chaotic states in an aggregate of semiconductor quantum dots is studied. We provide a universal dependence of the…

We show the formation of bright and dark slow optical solitons based on intersubband transitions in a semiconductor quantum well (SQW). Using the coupled Schrodinger-Maxwell approach, we provide both analytical and numerical results. Such a…

We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and…

A new scheme is proposed for rotations of a double-donor charge qubit whose logical states are defined by the two lowest energy states of a single electron localized around one or another donor. It is shown that making use of the microwave…

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons,…

In cuprates, the strong correlations in proximity to the antiferromagnetic Mott insulating state give rise to an array of unconventional phenomena beyond high temperature superconductivity. Developing a complete description of the ground…

We have studied the electronic properties and optical absorption spectra of three different cases of donor centers, D^{0}, D^{-} and D^{2-}, which are subjected to a perpendicular magnetic field, using the exact diagonalization method. The…

The quasiparticle resonant states around a single nonmagnetic impurity with unitary scattering in a d-wave superconductor is studied by solving the Bogoliubov-de Gennes equations based on a t-J model. Both the spatial variation of the order…

A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor…

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…

We present a first-principles study of the structural, electronic, and optical properties of hydrogenated amorphous silicon (a-Si:H). To this end, atomic configurations of a-Si:H with 72 and 576 atoms respectively are generated using…

We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum…

We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a…

Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is…

Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…

Modulated electroreflectance spectroscopy $\Delta R/R$ of semiconductor self-assembled quantum dots is investigated. The structure is modeled as dots with lens shape geometry and circular cross section. A microscopic description of the…

We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are…