Related papers: Donor states in modulation-doped Si/SiGe heterostr…
The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases…
We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…
We study the electronic properties of spherical quantum dot quantum well nanocrystals within a symmetry-based tight-binding model. In particular, the influence of a concentric monolayer of HgS embedded in a spherical CdS nanocrystal of…
We calculate the electronic wave-function for a phosphorus donor in silicon by numerical diagonalisation of the donor Hamiltonian in the basis of the pure crystal Bloch functions. The Hamiltonian is calculated at discrete points localised…
A random matrix theory approach is applied in order to analyze the localization properties of local spectral density for a generic system of coupled quantum states with strong static imperfection in the unperturbed energy levels. The system…
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed…
Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation…
In this paper we derive a formula for the density of states in the presence of inelastic scattering in the quantum well of a double barrier structure as a function of a characteristic time of the motion of electrons (namely, the round trip…
Digital Magnetic Heterostructures (DMH) are semiconductor structures with magnetic monolayers. Here we study electronic and magneto-transport properties of shallow modulation-doped (ZnSe/ZnCdSe) DMHs with spin-5/2 Mn impurities. We compare…
Localization of a particle in the wells of an asymmetric double-well (DW) potential is investigated here. Information entropy-based uncertainty measures, such as Shannon entropy, Fisher information, Onicescu energy, etc., and phasespace…
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the…
In this paper, a novel lateral quantum well solar cell has been introduced, and the structural parameters effects of these nano-structures on the performance of the device have been investigated. For modeling, the continuity equation has…
The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained. We apply the effective mass approximation and use a…
We propose a unified description of intersubband absorption saturation for quantum wells inserted in a resonator, both in the weak and strong light-matter coupling regimes. We demonstrate how absorption saturation can be engineered. In…
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole…
A variational calculus method is applied for hydrogen-like impurities states and exciton states in AlGaAs/GaAs quantum wells within the effective masses approach. The hamiltonian is separated into radial and transversal parts to be…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the…
We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P$_2^+$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve…