Related papers: Donor states in modulation-doped Si/SiGe heterostr…
In this study, we have investigated the inter-sublevel optical properties of a core/shell/well/shell spherical quantum dot with the form of quantum dot-quantum well heterostructure. In order to determine the energy eigenvalues and…
We carry out a detailed investigation of neutral ($D^0$) and charged ($D^-$) impurity states of hydrogen-like donors in spherical semiconductor quantum dots. The investigation is carried out within the effective mass theory (EMT). We take…
We present results of variational calculations of the binding energy of a neutral donor in a quantum well in the presence of a magnetic field tilted relative to the QW plane. Assuming that the donor is located in the center of the QW, we…
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared…
The ground state energy of exciton bound by distant ionized donor impurity in two-dimensional semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the…
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation…
Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…
The quantum spin Hall effect in non-magnetic and Mn-doped HgTe quantum well is strongly affected by Kondo scattering of edge electrons by holes localized on acceptors. A generalized eigenvalue method is usually employed for determining…
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite…
Energy states below the bandgap of a semiconductor, such as trap states or charge transfer states in organic donor acceptor blends, can contribute to light absorption. Due to their low number density or ultrasmall absorption cross-section,…
Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these…
The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The…
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…
In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach, which combines the spherical 8-band effective-mass Hamiltonian and the…
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving…
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented,…