Related papers: Quantum wells with atomically smooth interfaces
Structured quantum light is crucial for high-dimensional quantum information processing, yet its direct generation from quantum emitters remains challenging due to their intrinsic locality and omnidirectional radiation. Metasurfaces have…
The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate to decades-old workhorse bulk nonlinear optical materials,…
We propose an asymmetric quantum well structure to realize strong interaction between two slow optical pulses. The linear optical properties and nonlinear optical responses associated with cross-Kerr nonlinearity are analyzed. Combining the…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square…
We present a controlled mechanical exfoliation technique for bulk 3D topological insulators that yields atomically clean ultrathin flakes, enabling quantum well states (QWS) of Dirac electrons to be clearly resolved. Achieving reliable…
The initial steps of MBE growth of GaAs on beta 2-reconstructed GaAs(001) are investigated by performing total energy and electronic structure calculations using density functional theory and a repeated slab model of the surface. We study…
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome…
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…
We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we…
The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a…
We propose a compact high-intensity room-temperature source of entangled photons based on the efficient second-order process of two-photon spontaneous emission from electrically-pumped semiconductor quantum wells in a photonic microcavity.…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left <…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
The quantum-Hall-effect (QHE) occurs in topologically-ordered states of two-dimensional (2d) electron-systems in which an insulating bulk-state coexists with protected 1d conducting edge-states. Owing to a unique topologically imposed…
The ultimate non-classic light sources for modern photonic quantum technology require on-demand generation of indistinguishable quantum light with high brightness and flexible engineering of quantum emission in multiple degrees of freedom.…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…