English

Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

Mesoscale and Nanoscale Physics 2019-04-10 v1

Abstract

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011n_e > 4 \times 10^{11} cm2^{-2}) which is expected to favor QHS orientation along unconventional <11ˉ0>\left < 1\bar{1}0 \right > crystal axis and along the in-plane magnetic field BB_{||}. Surprisingly, we find that at B=0B_{||} = 0 QHSs in our samples are aligned along <110>\left < 110 \right > direction and can be reoriented only perpendicular to BB_{||}. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to BB_{||}, while quantum confinement of the 2DEG likely plays an important role.

Keywords

Cite

@article{arxiv.1904.03151,
  title  = {Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells},
  author = {X. Fu and Q. Shi and M. A. Zudov and Y. J. Chung and K. W. Baldwin and L. N. Pfeiffer and K. W. West},
  journal= {arXiv preprint arXiv:1904.03151},
  year   = {2019}
}

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4 pages