Related papers: Quantum wells with atomically smooth interfaces
Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge…
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence…
Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of…
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide…
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…
Single photon sources, which are compatible with quantum memories are an important component of quantum networks. In this article, we show optical investigations on isolated GaAs/Al$_{0.25}$Ga$_{0.75}$As quantum dots grown via droplet…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were…
Scattering processes by the interface roughness in a quantum well in a quantizing magnetic field are considered. An expression for the scattering rate is derived for a magnetic field tilted relative to the quantum well layers. By analyzing…
Surfaces are at the frontier of every known solid. They provide versatile supports for functional nanostructures and mediate essential physicochemical processes. Being intimately related with 2D materials, interfaces and atomically thin…
Cavity quantum electrodynamics (cQED) harnesses light-matter interactions to produce nonclassical light states. However, a fundamental challenge lies in simultaneously achieving Purcell enhancement and tailored wavefront control within a…
We examine a graphene quantum dot formed by combining an electric and a uniform magnetic field. The electric field creates a smooth quantum well potential while the magnetic field induces an exponential tail to the dot states. The states…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an…
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly…