Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
@article{arxiv.0801.0364,
title = {Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots},
author = {Sokratis Kalliakos and Vittorio Pellegrini and Cesar Pascual Garcia and Aron Pinczuk and Loren N. Pfeiffer and Ken. W. West},
journal= {arXiv preprint arXiv:0801.0364},
year = {2015}
}