Related papers: Optical control of energy-level structure of few e…
We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We describe an opto-electronic structure in which charge and spin degrees of freedom in electrical gate-defined quantum dots can be coherently coupled to light. This is achieved via electron-electron interaction or via electron tunneling…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being…
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported.…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is…
We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on…
Current carrying chiral edge states in quantum Hall systems have fascinating properties that are usually studied by electron spectroscopy and interferometry. Here we demonstrate that electron occupation, current, and electron coherence in…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…