InAs/InP single quantum wire formation and emission at 1.5 microns

B. Alén; D. Fuster; Y. González; L. González; J. Martínez-Pastor; M. U. González; J. M. García

doi:10.1063/1.2403928

InAs/InP single quantum wire formation and emission at 1.5 microns

Mesoscale and Nanoscale Physics 2010-07-15 v2

Authors: B. Alén , D. Fuster , Y. González , L. González , J. Martínez-Pastor , M. U. González , J. M. García

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Abstract

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

Keywords

InAs/InP quantum wires self-assembled photoluminescence 1.5 microns atomic force microscopy nanostructures

Cite

@article{arxiv.cond-mat/0606134,
  title  = {InAs/InP single quantum wire formation and emission at 1.5 microns},
  author = {B. Alén and D. Fuster and Y. González and L. González and J. Martínez-Pastor and M. U. González and J. M. García},
  journal= {arXiv preprint arXiv:cond-mat/0606134},
  year   = {2010}
}

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4 pages and 3 figures submitted to Applied Physics Letters

InAs/InP single quantum wire formation and emission at 1.5 microns

Abstract

Keywords

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