Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy

N. Ha; T. Mano; Y. -N. Wu; Y. -W. Ou; S. -J. Cheng; Y. Sakuma; K. Sakoda; T. Kuroda

doi:10.7567/APEX.9.101201

Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy

Materials Science 2016-09-28 v1

Authors: N. Ha , T. Mano , Y. -N. Wu , Y. -W. Ou , S. -J. Cheng , Y. Sakuma , K. Sakoda , T. Kuroda

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Abstract

By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of barrier choice.

Keywords

InAs quantum dots droplet epitaxy InP(111)A substrate wavelength extension C3v symmetry barrier band gap tuning quantum-entangled photon emitters

Cite

@article{arxiv.1607.06859,
  title  = {Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy},
  author = {N. Ha and T. Mano and Y. -N. Wu and Y. -W. Ou and S. -J. Cheng and Y. Sakuma and K. Sakoda and T. Kuroda},
  journal= {arXiv preprint arXiv:1607.06859},
  year   = {2016}
}

Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy

Abstract

Keywords

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