Related papers: Titanium single electron transistor fabricated by …
In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
In this work, we patterned a two-dimensional electron gas (2DEG) on the surface of a SrTiO$_3$ thin film grown homoepitaxially on SrTiO$_3$ by hybrid molecular beam epitaxy (hMBE). We explored the superconducting dome in this material…
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the…
This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to…
We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors…
Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search…
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and…
Thin-film-like high temperature superconducting Bi2Sr2CaCu2O8+x single crystals (TSB) with a typical thickness of 20-200 nm is produced by mechanical exfoliation. The TSB, which shows excellent superconductivity, can adhere firmly to the…
We report on the fabrication and electrical transport properties of superconducting junctions made of \beta-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the…
We have fabricated a variety of novel molecular tunnel junctions based on self-assembled-monolayers (SAM) of two-component solid-state mixtures of molecular wires (1,4 methane benzene-dithiol; Me-BDT with two thiol anchoring groups), and…
Superconductivity of transition metal dichalcogenide $1T$-TiTe$_2$ under high pressure was investigated by the first-principles calculations. Our results show that the superconductivity of $1T$-TiTe$_2$ exhibits very different behavior…
By using first-principles calculations, we propose that ZrSiO can be looked as a three-dimensional (3D) oxide weak topological insulator (TI) and its single layer is a long-sought-after 2D oxide TI with a band gap up to 30 meV. Calculated…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
A standard route for fabrication of nanoscopic tunnel junctions is via electromigration of lithographically prepared gold nanowires. In the lithography process, a thin adhesion layer, typically titanium, is used to promote the adhesion of…
We report on superconductivity in single crystals of SrTiO$_{3-\delta}$ with carrier densities $\textit{n} < 1.4 \times10^{18}cm^{-3}$, where only a single band is occupied. For all samples in this regime, the resistive transition occurs at…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
We have developped a novel lift-off process for fabrication of high quality superconducting submicron niobium structures. The process makes use of a thermostable polymer with a high transition temperature T_{g}= 235 C and an excellent…