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We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350mK and in magnetic fields up to 9T, with thin film deposition and in-situ cleaving capabilities. The main…
Using a membrane-driven diamond anvil cell and both ac magnetic susceptibility and electrical resistivity measurements, we have characterized the superconducting phase diagram of elemental barium to pressures as high as 65 GPa. We have…
Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating…
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto…
A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface…
We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…
Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi$_2$Se$_3$ family, are…
This work reports superconductivity studies in the intermetallic Ti$_{0.85}$Pd$_{0.15}$ performed in normal conditions and under hydrostatic pressure. The crystal structure of the compound has a body centered cubic at room temperature and…
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on…
Tunnel junctions are one of the key elements of chip-scale microsystems serving various technologies from classical microelectronics to quantum information. Aluminium and its oxide (AlOx) have dominated cryogenic tunnel junction technology…
We investigate a photolithography-only fabrication process for transmon Josephson junctions using a modified double-oblique evaporation geometry. Using a bilayer resist process and Al shadow evaporation, we fabricate junction structures and…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
Superconducting junctions are widely used in multitude of applications ranging from quantum information science and sensing to solid-state cooling. Traditionally, such devices must be fabricated on flat substrates using standard…
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow…
We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base…
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is…
We report a novel method of growing strongly-disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and superconducting critical temperature (Tc) can be tuned by…