Related papers: Titanium single electron transistor fabricated by …
We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed…
Binary stoichiometry FeSe (s-FeSe) is a well-known parent of high-temperature unconventional superconductors owing to its charge-neutral layer, highly tunable structure and electronic properties, and rich interplays among multiple…
This paper shows single electron transistor at room temperature,created on macroscopic system-the two-dimensional large area surface of our hydrogenated diamond like carbon thin film. Our results, free from the limitation of lowering the…
Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is reported. Magnetotransport measurement was performed…
Bipolar thermoelectricity in tunnel junctions between superconductors of different energy gap has been recently predicted and experimentally demonstrated. This effect showed thermovoltages up to $\pm150\;\mu$V at milliKelvin temperatures.…
High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
We report the first observation of superconductivity in heterostructure consisting of an insulating ferroelectric film (Ba$_{0.8}$Sr$_{0.2}$TiO$_3$) grown on an insulating parent compound of La$_2$CuO$_4$ with [001] orientation. The…
We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg.…
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 \mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the…
We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an…
We report the electrical transport in vertical Josephson tunnel junctions (area 400 $\mu m$$^2$) using GdBa$_2$Cu$_3$O$_7$$_{-\delta}$ electrodes and SrTiO$_3$ as an insulating barrier (with thicknesses between 1 nm and 4 nm). The results…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…
The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest…
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped…
We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different…
Josephson junctions form the core circuit element in superconducting quantum computing circuits, single flux quantum digital logic circuits, and sensing devices such as SQUIDs. Aluminum oxide has typically been used as the tunnel barrier.…