A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.
@article{arxiv.1908.09272,
title = {Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam},
author = {Ryo Matsumoto and Shintaro Adachi and El Hadi S. Sadki and Sayaka Yamamoto and Hiromi Tanaka and Hiroyuki Takeya and Yoshihiko Takano},
journal= {arXiv preprint arXiv:1908.09272},
year = {2020}
}