Multiple layer local oxidation for fabricating semiconductor nanostructures

M. Sigrist; A. Fuhrer; T. Ihn; K. Ensslin; D. C. Driscoll; A. C. Gossard

doi:10.1063/1.1809273

Multiple layer local oxidation for fabricating semiconductor nanostructures

Mesoscale and Nanoscale Physics 2009-11-10 v1

Authors: M. Sigrist , A. Fuhrer , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

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Abstract

Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process.

Keywords

silicon physics nanoparticles semiconductor nanowire growth

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@article{arxiv.cond-mat/0411129,
  title  = {Multiple layer local oxidation for fabricating semiconductor nanostructures},
  author = {M. Sigrist and A. Fuhrer and T. Ihn and K. Ensslin and D. C. Driscoll and A. C. Gossard},
  journal= {arXiv preprint arXiv:cond-mat/0411129},
  year   = {2009}
}

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3 pages, 3 figures

Multiple layer local oxidation for fabricating semiconductor nanostructures

Abstract

Keywords

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