Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Measurements of magnetic hysteresis loops in single Co nanoparticles at dilution refrigerator temperatures are presented. The nanoparticles are in electric contact with bulk Al leads via tunnel junctions. The tunnel current versus magnetic…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Theory of current hysteresis for tunneling through a molecular quantum dot (MQD) with strong electron-vibron interactions and attractive electron-electron correlations is developed. The dot is modeled as a d-fold degenerate energy level…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
We have characterized the vertical transport properties of epitaxial layered structures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched between SrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO,…
A thin Co/Cu/Permalloy (Ni$_{80}$Fe$_{20}$) pseudo-spin-valve structure is sandwiched between superconducting Nb contacts. When the current is passed perpendicular to the plane of the film a Josephson critical current ($I_C$) is observed at…
Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
We report the fabrication and testing, at 4.2 K, of an SISFS device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top…
Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the…
Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (~100nm in diameter) has been studied experimentally for large applied fields perpendicular to the layers. An abrupt and hysteretic increase in dynamic resistance is…
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…
Despite being a layered, easily-exfoliated compound, copper monotelluride (CuTe) features an unusual quasi-one-dimensional charge density wave below $T_{\rm CDW}\approx335$ K. Within a CuTe layer, the electrical resistivity depends…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…