Related papers: Hole spin polarization in GaAlAs:Mn structures
Here we investigate the spin-dependent subband structure of newly-developed Mn-based modulation-doped quantum wells. In the presence of an external magnetic field, the s-d exchange coupling between carriers and localized d electrons of the…
We study collective spin excitations in two-dimensional diluted magnetic semiconductors, placed into external magnetic field. Two coupled modes of the spin waves (the electron and ion modes) are found to exist in the system along with a…
Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum in which the proposed structure is remarkably spin-selective. For such…
A spin-1/2 Anderson impurity in a semiconductor quantum well with Rashba and Dresselhaus spin-orbit couplings is studied by using a variational wave function method. The local magnetic moment is found to be quenched at low temperatures. The…
We investigate the combined influence of a magnetic field and a harmonic interparticle interaction on the thermodynamic properties of a finite number of spin polarized fermions in a confiment potential. This study is an extension using our…
We revisit the problem of the spontaneous magnetization of an {\em sp} impurity atom in a simple metal host. The main features of interest are: (i) Formation of the spherical spin density/charge density wave around the impurity; (ii)…
The electric-field-induced resonant spin polarization of a two-dimensional hole gas described by Luttinger Hamiltonian with structural inversion asymmetry and Zeeman splitting in a perpendicular magnetic field was studied. The spin…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We…
The magnetic field of complete spin polarization is calculated in a disorderless single-valley strongly-interacting 2D electron system. In the metallic region above the Wigner-Mott transition, non-equilibrium spin states are predicted,…
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit…
Recent experiments on resonant tunneling structures comprising (Ga,Mn)As quantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strong debate regarding their interpretation as resonant tunneling features and the near…
The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are…
We discuss an exactly solvable model Hamiltonian for describing the interacting electron gas in a quantum dot. Results for a spherical square well confining potential are presented. The ground state is found to exhibit striking oscillations…
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and…