Related papers: Hole spin polarization in GaAlAs:Mn structures
The magnetization of quantum dots is discussed in terms of a relatively simple but exactly solvable model Hamiltonian. The model predicts oscillations in spin polarization as a function of dot radius for a fixed electron density. These…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…
Universal properties of spin-Hall effect in ballistic 2D electron systems are addressed. The net spin polarization across the edge of the conductor is second order, ~\lambda^2, in spin-orbit coupling constant independent of the form of the…
Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic…
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details…
The interrelation between spin and charge in semiconductors leads to interesting effects, e.g., the Rashba-type spin-orbit splitting or the exchange enhancement. These properties are proposed to be used in applications such as spin…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Spin-charge coupling is studied for a strongly confined two-dimensional hole gas subject to a perpendicular magnetic field. The study is based on spin-charge coupled drift-diffusion equations derived from quantum-kinetic equations in an…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in…
The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B \textbf{70}, 125301…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
In semiconductors, spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields, are used to control electron-spin polarization. This operation, however, destroys the electron-spin coherence, and the spin polarization is…
We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description…
We theoretically describe the spin excitation spectrum of a two dimensional electron gas embedded in a quantum well with localized magnetic impurities. Compared to the previous work, we introduce equations that allow to consider the…
The electronic structure of the neutral and singly charged Mg vacancy in MgO is investigated using density functional theory. For both defects, semilocal exchange correlation functionals such as the local spin density approximation…
Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts…
First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic…