We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
@article{arxiv.1511.02881,
title = {Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres},
author = {M. A. G. Balanta and M. J. S. P. Brasil and F. Iikawa and Udson C. Mendes and J. A. Brum and Yu. A. Danilov and M. V. Dorokhin and O. V. Vikhrova and B. N. Zvonkov},
journal= {arXiv preprint arXiv:1511.02881},
year = {2016}
}