Related papers: Hole spin polarization in GaAlAs:Mn structures
It is shown that in organic semiconductors where organic magnetoresistance (OMAR) is observed, the exchange interaction between electrons and holes localized at different molecules leads to dynamic spin polarization in the direction of the…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We…
Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane.…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring,…
A BCS-like variational wave-function, which is exact in the infinite field limit, is used to study the interplay among Zeeman energies, lateral confinement and particle correlations induced by the Coulomb interactions in strongly pumped…
We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($\rho$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
Spin polarizabilities provide information on the internal structure of hadrons in the presence of weak external electromagnetic fields, and are actively studied by Compton scattering experiments. They provide finer detail than the regular…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
The magnetic properties of the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As are studied within the dynamical cluster approximation. We use the k-dot-p Hamiltonian to describe the electronic structure of GaAs with spin-orbit coupling and…
We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary…
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well…
The average electron spin-polarization $\cal P$ of two-dimensional electron gas confined in $\rm GaAs/GaAlAs$ multiple quantum-wells was measured by nuclear magnetic resonance (NMR) near the fractional quantum Hall state with filling factor…
Alloying effects by T=Mn,Co,Ni-substitution on FeS$_2$ have been investigated using density-functional calculations. The ferromagnetic alloys Fe$_{1-x}$T$_x$S$_2$ have been investigated for concentrations…
The problem of electron resonant and non-resonant scatterings on two magnetized barriers is studied in the one-dimension. The transfer-matrix is built up to exactly calculate the coefficient of the electron transmittance through the system…