Related papers: Carrier and Light Trapping in Graded Quantum Well …
A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spectra in fields up to 55 T. This has been caused by a…
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM)…
Gravitational microlensing has proven to be a powerful probe of both the structure at the heart of quasars and the mass function of compact objects in foreground lenses. This paper examines the potential of gravitational microlensing in…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
This work is devoted to the research of conditions of the dark resonance (coherent population trapping) of the interaction of the laser radiation with tunneling-coupled quantum wells. The phase sensitive dependence of dark resonances has…
Practical and useful quantum information processing (QIP) requires significant improvements with respect to current systems, both in error rates of basic operations and in scale. Individual trapped-ion qubits' fundamental qualities are…
We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a…
We study optical cavity locking for laser stabilization through spatial modulation of the phase front of a light beam. A theoretical description of the underlying principle is developed for this method and special attention is paid to…
We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic…
This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during…
Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier…
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…
Recent progress in manufacturing high-electron-mobility transistors and optoelectronic devices highlights the necessity of understanding the charge dynamics and its impact on the optical properties inside heterostructures. Herein, we study…
Quantum well of AlGaAs/GaAs is very important to study transport properties of electrons due to its wider application in electronic devices. Hence, the double well of AlGaAs/GaAs with triple barrier is taken to study transmission…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…
Using numerical simulations we show how to realise an optical black hole laser, i.e. an amplifier formed by travelling refractive index perturbations arranged so as to trap light between a white and a black hole horizon. The simulations…
In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for…
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…
We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling…
We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs.…