Related papers: Carrier and Light Trapping in Graded Quantum Well …
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper…
The selective confinement of light holes (LHs) in a tensile-strained germanium (Ge) quantum well is studied by mapping the electronic structure of Ge$_{1-x}$Sn$_x$/Ge/Ge$_{1-x}$Sn$_x$ heterostructures as a function of Sn content, residual…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
We demonstrate the localisation of quantum well excitons in a periodic array of linear traps using photoluminescence experiments. The excitonic traps are induced by applying spatially alternating external voltages via interdigitated metal…
Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent…
Confining electromagnetic energy is crucial to enhance light-matter interactions, with important implications for science and technology. Here, we discuss the opportunities offered by trapping and confining light in open structures, based…
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited…
We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…
We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power…
We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of…
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…
We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…
We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in…
Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of…
The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a…
Photonic crystal cavities enable the realization of high Q-factor and low mode-volume resonators, with typical architectures consisting of a thin suspended periodically-patterned layer to maximize confinement of light by strong index…
We demonstrate single-atom trapping in two-dimensional arrays of microtraps with arbitrary geometries. We generate the arrays using a Spatial Light Modulator (SLM), with which we imprint an appropriate phase pattern on an optical dipole…
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band…
We have studied a system consisted of two coupled quantum dots containing two electrons subjected by a laser field. The effect of the laser is described by the dressed-band approach involving the concept of the conduction/valence effective…
Raman lasers are used as a spectroscopic probe of the state of atoms confined in a shallow 1D vertical lattice. For long enough laser pulses, resolved transitions in the bottom band of the lattice between Wannier Stark states corresponding…