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Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
An anomalous energy splitting of spin triplet states at zero magnetic field has recently been measured in germanium quantum dots. This zero-field splitting could crucially alter the coupling between tunnel-coupled quantum dots, the basic…
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has recently been adopted for superconducting qubits, but has…
Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins…
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as…
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links…
A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are…
Variational quantum algorithms exploit the features of superposition and entanglement to optimize a cost function efficiently by manipulating the quantum states. They are suitable for noisy intermediate-scale quantum (NISQ) computers that…
A promising platform for quantum information processing is that of silicon impurities, where the quantum states are manipulated by magnetic resonance. Such systems, in abstraction, can be considered as a nucleus of arbitrary spin coupled to…
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a…
Scalable quantum information processing in spin-based architectures necessitates the a bility to reliably shuttle quantum states across extended device regions with minimal decoherence. In this work, we present a physics-informed algorithm…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary.…