Related papers: Tailoring Germanium Heterostructures for Quantum D…
Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the…
Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but…
The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of…
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled…
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy…
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well.…
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on…
Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and…
Germanium hole spin qubits based on strained Ge/SiGe quantum well have attracted much research attention due to the strong spin-orbit coupling. In particular, the strain dependence of the heavy-hole--light-hole mixing and thus the…
An array of quantum rings with local (ring by ring) modulation of the spin orbit interaction (SOI) can lead to novel effects in spin state transformation of electrons. It is shown that already small (3x3, 5x5) networks are remarkably…
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…
The promise of quantum computation with quantum dots has stimulated widespread research. Still, a platform that can combine excellent control with fast and high-fidelity operation is absent. Here, we show single and two-qubit operations…
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose…
There are many researches reported in using Germanium in Silicon based lasers but acquiring this potential for a nanolaser may also be important for development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe multiple quantum…
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…