Related papers: Tailoring Germanium Heterostructures for Quantum D…

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface…

Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…

Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…

Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial…

Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…

Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…

The intense simulation efforts on hole-spin qubits in germanium have so far focused primarily on singly occupied quantum dots. Here, we theoretically investigate three-hole qubits in germanium and demonstrate that their performance can…

Hybrid semiconductor-superconductor qubits have recently emerged as a promising alternative to traditional platforms, combining material advantages with device-level tunability. A defining feature is their gate-tunable Josephson coupling,…

Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly…

Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and…

We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge…

Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits…

Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…

We predict a new quantum electronic structure at the interface between two condensed phases of noble-gas elements: solid neon and superfluid helium. An excess electron injected onto this interface self-confines its wavefunction into a…

Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have…

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of…

The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an…

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…