Roadmap on Atomic-scale Semiconductor Devices
Abstract
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.
Cite
@article{arxiv.2501.04535,
title = {Roadmap on Atomic-scale Semiconductor Devices},
author = {Steven R. Schofield and Andrew J. Fisher and Eran Ginossar and Joseph W. Lyding and Richard Silver and Fan Fei and Pradeep Namboodiri and Jonathan Wyrick and M. G. Masteghin and D. C. Cox and B. N. Murdin and S. K Clowes and Joris G. Keizer and Michelle Y. Simmons and Holly G. Stemp and Andrea Morello and Benoit Voisin and Sven Rogge and Robert A. Wolkow and Lucian Livadaru and Jason Pitters and Taylor J. Z. Stock and Neil J. Curson and Robert E. Butera and Tatiana V. Pavlova and A. M. Jakob and D. Spemann and P. Räcke and F. Schmidt-Kaler and D. N. Jamieson and Utkarsh Pratiush and Gerd Duscher and Sergei V. Kalinin and Dimitrios Kazazis and Procopios Constantinou and Gabriel Aeppli and Yasin Ekinci and James H. G. Owen and Emma Fowler and S. O. Reza Moheimani and John N. Randall and Shashank Misra and Jeffrey Ivie and Christopher R. Allemang and Evan M. Anderson and Ezra Bussmann and Quinn Campbell and Xujiao Gao and Tzu-Ming Lu and Scott W. Schmucker},
journal= {arXiv preprint arXiv:2501.04535},
year = {2025}
}
Comments
94 pages