Related papers: Tailoring Germanium Heterostructures for Quantum D…
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the…
Quantum-selected configuration interaction (QSCI) has emerged as a feasible approach for approximating electronic ground states on noisy quantum devices toward large-system demonstrations. In QSCI, Slater determinants are sampled from a…
Superconducting spin qubits, also known as Andreev spin qubits, promise to combine the benefits of superconducting qubits and spin qubits defined in quantum dots. While most approaches to control these qubits rely on controlling the spin…
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field…
Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here we build on a recent proposal to construct superconducting devices such as wires,…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a…
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…
Hole semiconductor nanowires (NW) are promising platforms to host spin qubits and Majorana bound states for topological qubits because of their strong spin-orbit interactions (SOI). The properties of these systems depend strongly on the…
Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium…
The strong spin-orbit interaction in silicon and germanium hole quantum dots enables all-electric microwave control of single spins but is unsuited for multi-spin exchange-only qubits that rely on scalable discrete signals to suppress…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the…
Rare-earth-ion-doped crystals has emerged as a promising platform for quantum technologies, owing to their narrow telecom-band optical emission, long spin memory, and compatibility with silicon integrated photonic architectures. However,…
Spin-orbit interaction (SOI) is a fundamental component for electrically driven spin qubits and hybrid superconducting-semiconducting systems. In particular, Rashba SOI (RSOI) is a key mechanism enabling all-electrical spin manipulation…
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and…
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
In superconductor-semiconductor hybrid structures, superconductivity and spin polarization are competing effects because magnetic fields break Cooper pairs. They can be combined using thin films and in-plane magnetic fields, an approach…
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important…