Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into junctions that demonstrate a broken gap alignment. We predict such basic building block undergo a quantum phase transition that can elegantly accommodate the existence of gate-controlled chiral edge states directly on Si. This will enable tantalizing prospects for designing integrated circuits hosting quantum spin hall insulators and advanced topological functionalities.
@article{arxiv.2210.02981,
title = {Quantum spin Hall phase in GeSn heterostructures on silicon},
author = {B. M. Ferrari and F. Marcantonio and F. Murphy-Armando and M. Virgilio and F. Pezzoli},
journal= {arXiv preprint arXiv:2210.02981},
year = {2023}
}