Related papers: kV-Class Lateral NiOx/GaN Super-Heterojunction Dio…

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV…

This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage…

Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped…

${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…

In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this…

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…

This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3 epitaxial layers. Both as-fabricated Cr2O3 and NiOx HJDs…

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…

We carefully investigate three important effects including postgrowth activation annealing, delta ({\delta}) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction…

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer…

We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto…

This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric…

n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and…

This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…

We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with…

This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…

NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical…