Related papers: Improved operating voltage in InGaN-capped AlGaN-b…

An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…

Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a…

Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd…

We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency…

Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electronics and deep-ultraviolet optoelectronics. Conventional…

Fabrication of diode by forming n-type electrical contact on germanium (Ge) and its AC impedance analysis is important for radiation detection in the form of pulses. In this work lithium (Li) metal has been electro-deposited on p-type Ge…

Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…

Ultra-wide-band-gap group-III nitrides are of interest for applications in deep-ultraviolet optoelectronics and power electronics. Such devices must be able to efficiently dissipate heat generated from their operation, making the thermal…

To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to…

We present a high-power tunable deep-ultraviolet (DUV) laser that uses two consecutive cavity enhanced doubling stages with LBO and CLBO crystals to produce the fourth harmonic of an amplified homebuilt external cavity diode laser. The…

We demonstrate a suspended thin-film aluminum nitride (AlN) microbolometer for narrowband very long-wave infrared detection. The device uses a 100-nm-thick AlN membrane suspended above a Pt back reflector by a 1-um air gap. Resonant…

Continuous monitoring of voltages ranging from tens to hundreds of kV over environmental conditions, such as temperature, is of great interest in power grid applications. This is typically done via instrument transformers. These…

We report on the fabrication of highly transparent superconductor/normal metal/two-dimensional electron gas junctions formed by a superconducting NbN electrode, a thin (10nm) Au interlayer, and a two-dimensional electron gas in a InGaAs/InP…

V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in…

The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths…

In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources.…

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses…

Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining…