Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating
Optics
2021-02-09 v1
Abstract
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
Keywords
Cite
@article{arxiv.2102.04129,
title = {Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating},
author = {Antoine Congar and Mathilde Gay and Georges Perin and Dominique Mammez and Jean-Claude Simon and Pascal Besnard and Julien Rouvillain and Thierry Georges and Laurent Lablonde and Thierry Robin and Stéphane Trebaol},
journal= {arXiv preprint arXiv:2102.04129},
year = {2021}
}