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Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications.…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
We analyze the statistics of charge and energy currents and spin torque in a metallic nanomagnet coupled to a large magnetic metal via a tunnel contact. We derive a Keldysh action for the tunnel barrier, describing the stochastic currents…
In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a 'spin-neuron' realized with a magneto-tunneling junction (MTJ) that is…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of…
We present a computationally efficient strategy that allows to simulate magnetization switching driven by spin-transfer torque in magnetic tunnel junctions within a micromagnetic model coupled with a matrix-based non-equilibrium Green's…
Probabilistic inference from real-time input data is becoming increasingly popular and may be one of the potential pathways at enabling cognitive intelligence. As a matter of fact, preliminary research has revealed that stochastic…
Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Brain-inspired learning in physical hardware has enormous potential to learn fast at minimal energy expenditure. One of the characteristics of biological learning systems is their ability to learn in the presence of various noise sources.…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This…
Many molecular junctions display stochastic telegraphic switching between two distinct current values, which is therefore an important source of fluctuations in nanoscale quantum transport. We investigate electronic fluctuations arising via…
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…
We study the transport through a quantum dot subject to a randomly fluctuating potential, generated by a sequence of pulses in the gate voltage with the help of the autoregressive model. We find that the tunneling current is multistable…
Probabilistic (p-) computing, which leverages the stochasticity of its building blocks (p-bits) to solve a variety of computationally hard problems, has recently emerged as a promising physics-inspired hardware accelerator platform. A…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog…