English

Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

Mesoscale and Nanoscale Physics 2012-05-17 v2

Abstract

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Keywords

Cite

@article{arxiv.1205.2835,
  title  = {Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions},
  author = {Jian Zhu and J. A. Katine and Graham E. Rowlands and Yu-Jin Chen and Zheng Duan and Juan G. Alzate and Pramey Upadhyaya and Juergen Langer and Pedram Khalili Amiri and Kang L. Wang and Ilya N. Krivorotov},
  journal= {arXiv preprint arXiv:1205.2835},
  year   = {2012}
}

Comments

5 pages; supplementary material added