High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Witold Skowronski; Stanislaw Lazarski; Jakub Mojsiejuk; Jakub Checinski; Marek Frankowski; Takayuki Nozaki; Kay Yakushiji; Shinji Yuasa

doi:10.1063/1.5113681

High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Applied Physics 2019-09-04 v1 Materials Science

Authors: Witold Skowronski , Stanislaw Lazarski , Jakub Mojsiejuk , Jakub Checinski , Marek Frankowski , Takayuki Nozaki , Kay Yakushiji , Shinji Yuasa

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Abstract

Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.

Keywords

voltage-induced ferromagnetic resonance magnetic tunnel junction perpendicular magnetic anisotropy magnetization damping macrospin modelling w buffer cofeb free layer

Cite

@article{arxiv.1906.01301,
  title  = {High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions},
  author = {Witold Skowronski and Stanislaw Lazarski and Jakub Mojsiejuk and Jakub Checinski and Marek Frankowski and Takayuki Nozaki and Kay Yakushiji and Shinji Yuasa},
  journal= {arXiv preprint arXiv:1906.01301},
  year   = {2019}
}

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Manuscript containing 4 pages and 4 figures

High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Abstract

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