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Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Non-linear dynamics, including auto-oscillations, chaotic dynamics, and synchronization, are integral to physical and biological applications and can be excited in spintronic devices. In this study, we are interested in exploring the…
In this work, the effect of electrical coupling on stochastic switching of two in-plane superparamagnetic tunnel junctions (SMTJs) is studied, using experimental measurements as well as simulations. The coupling mechanism relies on the…
In this manuscript we propose a theoretical model where the magneto-resistive elements are modelled as fluctuating resistances to correct the output voltage noise of tunnel magnetic junction (MTJ) from standard electronic circuits. This…
Spintronic devices have been widely studied for the hardware realization of artificial neurons. The stochastic switching of magnetic tunnel junction driven by the spin torque is commonly used to produce the sigmoid activation function.…
We have constructed a scanning tunneling potentiometry system capable of simultaneously mapping the transport-related electrochemical potential of a biased sample along with its surface topography. Combining a novel sample biasing technique…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
We demonstrate field and current controlled magnetodynamics in nanocontact spin-torque nano-oscillators (STNOs) based on orthogonal magnetic tunnel junctions (MTJs). We systematically analyze the microwave properties (frequency $f$,…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
We theoretically investigate the spin--wave spin current induced by the spin Seebeck effect in magnonic spin tunneling junctions (MSTJs) for arbitrary magnetization directions. We show that the MSTJ functions as a \textit{tunable} spin…
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current…
Magnetic skyrmion-based data storage and unconventional computing devices have gained increasing attention due to their topological protection, small size, and low driving current. However, skyrmion creation, deletion, and motion are still…
We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675{\mu}m2. In the smaller area…
Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
The conditions of field and voltage for inducing steady state excitations in fully perpendicular magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically investigated by the resolution of the…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…