Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Piotr Rzeszut; Witold Skowroński; Sławomir Ziętek; Jerzy Wrona; Tomasz Stobiecki

doi:10.1063/1.5097748

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Applied Physics 2019-07-24 v2

Authors: Piotr Rzeszut , Witold Skowroński , Sławomir Ziętek , Jerzy Wrona , Tomasz Stobiecki

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Abstract

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a single wafer stack, with a serial connections realized using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current induced magnetization switching in zero external magnetic field and stability diagram analysis of single, two-bit and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to increase capacity of future MRAM devices.

Keywords

magnetic tunnel junctions neuromorphic computing

Cite

@article{arxiv.1903.08949,
  title  = {Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions},
  author = {Piotr Rzeszut and Witold Skowroński and Sławomir Ziętek and Jerzy Wrona and Tomasz Stobiecki},
  journal= {arXiv preprint arXiv:1903.08949},
  year   = {2019}
}

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Abstract

Keywords

Cite

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