Related papers: Low barrier ZrO$_x$-based Josephson junctions
The microwave-driven dynamics of the superconducting phase difference across a Josephson junction is now widely employed in superconducting qubits and quantum circuits. With the typical energy level separation frequency of several GHz,…
Niobium and its alloys with early transition metals have been extensively studied for their excellent superconducting properties. They have high transition temperatures, strong upper critical fields, and high critical current densities,…
Superconducting qubits are among the most promising platforms for realizing practical quantum computers. One requirement to create a quantum processor is nonlinearity, which in superconducting circuits is typically achieved by sandwiching a…
We demonstrate that shunting of Superconductor-Insulator-Superconductor Josephson junctions by Superconductor-Insulator-Normal metal (S-I-N) structures having pronounced non-linear I-V characteristics can remarkably modify the Josephson…
Interfaces between metals based on AlO$_{x}$ represent the most popular basis for Josephson junctions or, more recently, also for junctions exhibiting substantial tunneling magneto-resistance. We have performed a computational study of…
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…
Reproducible High Tc Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge 1 to 5 micrometers wide is firstly designed by ion irradiating a c-axis-oriented YBa2Cu3O7 film through a gold…
Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson…
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…
To investigate the properties of iron-based superconductors, we examined different kinds of Josephson junctions using Co-doped Ba-122 thin films. Based on bicrystalline SrTiO3 substrates we prepared grain boundary (GB) junctions, which…
The performance of various superconducting devices operating at ultra-low temperatures is impaired by the presence of non-equilibrium quasiparticles. Inelastic quasiparticle (QP) tunneling across Josephson junctions in superconducting…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
Nickelate films have recently attracted broad attention due to the observation of superconductivity in the infinite layer phase of $Nd_{0.8}Sr_{0.2}NiO_2$ (obtained by reducing Sr doped $NdNiO_3$ films) and their similarity to the cuprates…
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree…
Made of a thin non-superconducting metal (N) sandwiched by two superconductors (S), SNS Josephson junctions enable novel quantum functionalities by mixing up the intrinsic electronic properties of N with the superconducting correlations…
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron…
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We study from first principles the transport properties of Al/AlOx/Al tunnel junctions. On this basis, we analyze the reliability of two analytical models for the conductance, namely the trapezoid potential barrier model and a tight-binding…