Related papers: Design and Simulation of 6T SRAM Array

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

This paper presents 6T SRAM cell-based bit-parallel in-memory computing (IMC) architecture to support various computations with reconfigurable bit-precision. In the proposed technique, bit-line computation is performed with a short WL…

As minimum area SRAM bit-cells are obtained when using cell ratio and pull-up ratio of 1, we analyze the possibility of decreasing the cell ratio from the conventional values comprised between 1.5-2.5 to 1. The impact of this option on…

This paper describes a multi-functional deep in-memory processor for inference applications. Deep in-memory processing is achieved by embedding pitch-matched low-SNR analog processing into a standard 6T 16KB SRAM array in 65 nm CMOS. Four…

The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

`In-memory computing' is being widely explored as a novel computing paradigm to mitigate the well known memory bottleneck. This emerging paradigm aims at embedding some aspects of computations inside the memory array, thereby avoiding…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

This paper presents an in-memory computing (IMC) architecture developed on an 8x8 array of 8T SRAM cells. This architecture enables both multi-bit parallel Multiply-Accumulate (MAC) operations and standard memory processing through…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…