Related papers: Design and Simulation of 6T SRAM Array

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

The embedded DRAM (eDRAM) is more and more used in System On Chip (SOC). The integration of the DRAM capacitor process into a logic process is challenging to get satisfactory yields. The specific process of DRAM capacitor and the low…

This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a…

The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…

3T TRAM with doping profile (P+PNPNN+) is experimentally demonstrated on a silicon photonic platform. By using additional implant layers, this device provides excellent memory performance compared to the conventional structure (PNPN). TCAD…

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but…

This paper summarizes the idea of Tiered-Latency DRAM (TL-DRAM), which was published in HPCA 2013, and examines the work's significance and future potential. The capacity and cost-per-bit of DRAM have historically scaled to satisfy the…

With power consumption becoming a critical processor design issue, specialized architectures for low power processing are becoming popular. Several studies have shown that neural networks can be used for signal processing and pattern…

Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…

Custom memory organization are challenging task in the area of VLSI design. This study aims to design high speed and low power consumption memory for embedded system. Synchronous SRAM has been proposed and analyzed using various simulators.…

Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable the full adoption of processing-using-DRAM, it is necessary to provide support for more complex…

Memory accounts for a considerable portion of the total power budget and area of digital systems. Furthermore, it is typically the performance bottleneck of the processing units. Therefore, it is critical to optimize the memory with respect…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Analog content-addressable memories (aCAMs) based on memristors provide a promising pathway toward energy-efficient large-scale associative computing for Edge AI and embedded intelligence applications. They have been successfully applied to…

To accommodate the growing memory footprints of today's applications, CPU vendors have employed large DRAM caches, backed by large non-volatile memories like Intel Optane (e.g., Intel's Cascade Lake). The existing computer architecture…

A 28nm dense 6T-SRAM Digital(D)/Analog(A) Hybrid compute-in-memory (CIM) macro supporting complex num-ber MAC operation is presented. By introducing a 2D-weighted Capacitor Array, a hybrid configuration is adopted where digital CIM is…

In energy-constrained scenarios such as IoT applications, the primary requirement for System-on-Chips (SoCs) is to increase battery life. However, when performing sub/near-threshold operations, the relatively large leakage current hinders…

This paper presents a programmable in-memory-computing processor, demonstrated in a 65nm CMOS technology. For data-centric workloads, such as deep neural networks, data movement often dominates when implemented with today's computing…