Related papers: Design and Simulation of 6T SRAM Array

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…

Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…

In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…

In this paper, we propose a 'full-stack' solution to designing high capacity and low latency on-chip cache hierarchies by starting at the circuit level of the hardware design stack. First, we propose a novel Gain Cell (GC) design using…

Spin Transfer Torque RAM (STTRAM) is a promising candidate for Last Level Cache (LLC) due to high endurance, high density and low leakage. One of the major disadvantages of STTRAM is high write latency and write current. Additionally, the…

In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…

CMOS VLSI technology is the most dominant integration methodology prevailing in the world today. Various signal-processing blocks are made using analog or digital design techniques in MOS VLSI. An important component is the Memory unit used…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

The rapid development of Artificial Intelligence (AI) and Internet of Things (IoT) increases the requirement for edge computing with low power and relatively high processing speed devices. The Computing-In-Memory(CIM) schemes based on…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…

Structured sparsity enables deploying large language models (LLMs) on resource-constrained systems. Approaches like dense-to-sparse fine-tuning are particularly compelling, achieving remarkable structured sparsity by reducing the model size…

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

The landscape of emerging applications has been continually widening, encompassing various data-intensive applications like artificial intelligence, machine learning, secure encryption, Internet-of-Things, etc. A sustainable approach toward…

This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and…

Large scale digital computing almost exclusively relies on the von-Neumann architecture which comprises of separate units for storage and computations. The energy expensive transfer of data from the memory units to the computing cores…

Approximate computing (AC) leverages the inherent error resilience and is used in many big-data applications from various domains such as multimedia, computer vision, signal processing, and machine learning to improve systems performance…

Processing-in-memory (PIM), as a novel computing paradigm, provides significant performance benefits from the aspect of effective data movement reduction. SRAM-based PIM has been demonstrated as one of the most promising candidates due to…

Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability…