Related papers: Magnetically Modulated Electrical Switching in an …
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM…
Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport,…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
Next-generation spintronic sensors aim to overcome the limitations of traditional tunneling-magnetoresistance (TMR) devices, such as complex manufacturing, high $1/f$ noise, and significant offsets. This work presents a comprehensive…
A newly identified magnetic phase called altermagnet is being actively studied because of its unprecedented spin-dependent phenomena. Among the candidate materials, CrSb has a particularly high ordering temperature and a large…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin…
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
2D van der Waals (vdW) ferromagnets have emerged as promising materials for spintronic applications due to their unique magnetic properties and tunability. Controlling ferromagnetism via external stimuli is critical for both fundamental…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
We report on magnetotransport investigations of nano-scaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2K. Magnetotransport…
We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…